| PART |
Description |
Maker |
| AS4C256K16E0 |
5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS动态RAM（扩展数据总线
|
Alliance Semiconductor Corporation
|
| AS4C256K16FO |
5V 256K x 16 CMOS DRAM
|
Alliance Semiconductor
|
| HY534256 |
256K x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
| AS4LC256K16E0 |
3.3V 256K X 16 CMOS DRAM (EDO)
|
Alliance Semiconductor
|
| 29F002 MX29F002BQI-12 MX29F002NBQI-12 MX29F002TPI- |
DIODE SCHOTTKY 15V 2X20A TO247AD
DIODE SCHOTTKY 45V 2X20A TO247AD
MOSFET N-CH 500V 14A TO-247AD
Low Cost Precision Difet Operational Amplifier 8-SOIC 0 to 70
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
IC MOSFET DRIVER LS 4A DUAL 8DIP 256K X 8 FLASH 5V PROM, 90 ns, PQCC32
MOSFET N-CH 500V 20A TO-247AD 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| MT4C4256 |
256K x 4 DRAM Standard Or Low Power, Extended Refresh(标准或低功率，扩展刷新，256K x 4动态RAM)
|
Micron Technology, Inc.
|
| MT4C4256 MT4C4256-8 MT4C4256-12 MT4C4256-10 |
256K X 4RAM(FAST PAGE MODE)
256K x 4 DRAM
|
ETC[ETC]
Austin Semiconductor
List of Unclassifed Manufacturers
|
| SMJ44C251B SMJ44C251B-10HJM SMJ44C251B-10HMM SMJ44 |
256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
|
Austin Semiconductor
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| 27C256 27C256-10 27C256-10EL 27C256-10EP 27C256-10 |
256K (32K x 8) CMOS EPROM
256K (32K x 8) CMOS EPROM 256K2K的8）的CMOS存储
DIODE SCHOTTKY 150V 60A TO247AC
CAPACITOR 1500UF 80V ELECT TSHA
CAP 270UF 400V ELECT TS-ED
From old datasheet system
256K (32x8) CMOS EPROM
|
YEONHO Electronics Co., Ltd.
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| HYB514171BJ-50 HYB514171BJ-50- HYB514171BJ-60 Q671 |
256k x 16 Bit FPM DRAM 5 V 60 ns
256k x 16 Bit FPM DRAM 5 V 50 ns
256k x 16-Bit Dynamic RAM
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
